Low pressure silicon selective epitaxial growth and its thermodynamic considerations

Low Temperature Silicon Selective Epitaxial Growth(SEG) and Phosphorous Doping in a Reduced-Pressure Pancake Reactor

..................................................................................................................... x CHAPTER 1 : INTRODUCTION .................................................................................... 1 ................................................................................................ 1.1 Purpose of Work 1 .................................................

Selective Epitaxial Growth of Silicon for Vertical Diode Application

Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity loss during silicon SEG using the most popular H2/dichlorosilane (DCS)/HCl gas system were evaluated using a commercialized inspection tool in 200...

Characterization of sidewall defects in selective epitaxial growth of silicon

The sidewall defects in high quality selective epitaxial growth ~SEG! of silicon were characterized. Three different SEG diode structures were fabricated and the bulk and perimeter defects were characterized through electrical measurements and transmission electron microscopy ~TEM!. The structures investigated were SEG grown in a 1.2 mm thick wet-etched field oxide, SEG grown in 1.2 mm thick re...

Kerfless Wafering: Porous Silicon Reorganization and Epitaxial Silicon Growth

Epitaxial growth of non-cubic silicon

We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 1808 rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown th...